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Chang-Kun Zeng
Chang-Kun Zeng
Nanjing University
Optoelectronics
Chemistry
Optics
Schottky diode
Instability
2
Papers
8
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High-k HfO2 based AlGaN/GaN MIS-HEMTs with Y2O3 interfacial layer for high gate controllability and interface quality
2019
IEEE Journal of the Electron Devices Society
Ya-Ting Shi
Weizong Xu
Chang-Kun Zeng
Fang-Fang Ren
Jiandong Ye
Dong Zhou
Dunjun Chen
Rong Zhang
Youdou Zheng
Hai Lu
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Citations (6)
Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
2019
Applied Physics Express
Chang-Kun Zeng
Weizong Xu
Yuanyang Xia
Danfeng Pan
Yiwang Wang
Qiang Wang
Youhua Zhu
Fang-Fang Ren
Dong Zhou
Jiandong Ye
Dunjun Chen
Rong Zhang
Youdou Zheng
Hai Lu
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Citations (2)
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