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Ed Sikorski

Freescale Semiconductor

3

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Application of cyclic fluorocarbon/argon discharges to device patterning

2016 Journal of Vacuum Science and Technology
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Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond

2008 IEDM | International Electron Devices Meeting
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