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Tsuyoshi Arigane
Tsuyoshi Arigane
Throughput
Electronic engineering
Flash memory
Integrated circuit
Engineering
4
Papers
12
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Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories
2007
IEICE Transactions on Electronics
Kazuo Otsuga
Hideaki Kurata
Satoshi Noda
Yoshitaka Sasago
Tsuyoshi Arigane
Tetsufumi Kawamura
Takashi Kobayashi
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Citations (2)
A 130-nm CMOS 95-mm 2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput
2006
IEICE Transactions on Electronics
Hideaki Kurata
Shunichi Saeki
Takashi Kobayashi
Yoshitaka Sasago
Tsuyoshi Arigane
Keiichi Yoshida
Yoshinori Takase
Takayuki Yoshitake
O. Tsuchiya
Yoshinori Ikeda
Shunichi Narumi
Michitaro Kanamitsu
Kazuto Izawa
Kazunori Furusawa
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Citations (3)
Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories
2005
IEEE Journal of Solid-state Circuits
Hideaki Kurata
Shunichi Saeki
Takashi Kobayashi
Yoshitaka Sasago
Tsuyoshi Arigane
Kazuo Otsuga
Takayuki Kawahara
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Citations (7)
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