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Ching-Yuan Cheng

National Cheng Kung University

6

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20

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Impact of the strained SiGe source/drain on hot carrier reliability for 45 nm p-type metal-oxide-semiconductor field-effect transistors

2008 Applied Physics Letters
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Observation of negative differential resistance phenomenon in a two‐step barrier diode

1996 Applied Physics Letters
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The study of delta-doping concentration effect on a novel quantum-well HEMT structure

1996 ICSE | IEEE International Conference on Semiconductor Electronics
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The study of negative differential resistance phenomenon in a two-step barrier diode

1996 ICSE | IEEE International Conference on Semiconductor Electronics
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Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method

1995 Japanese Journal of Applied Physics
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