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Y. Okuda

NEC

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SUB-30nm MOSFET FABRICATIONTECHNOLOGY INCORPORATINGPRECISEDOPANT PROFILEDESIGNUSINGDIFFUSION-LESS HIGH-ACTIVATION LASERANNEALING

2006 International Conference on Advanced Thermal Processing of Semiconductors
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Sub-30nm Mosfet Fabrication Technology Incorporating Precise Dopant Profile Design using Diffusion-Less High-Activation Laser Annealing

2006 RTP | International Conference on Advanced Thermal Processing of Semiconductors
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