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Amjad Nazzal

Wilkes University

25

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Si based GeSn light emitter: mid-infrared devices in Si photonics

2015 Proceedings of SPIE
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Enhanced responsivity by integration of interdigitated electrodes on Ge 0.93 Sn 0.07 infrared photodetectors

2014 IPC | IEEE Photonics Conference
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Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

2014 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

2014 Journal of Electronic Materials
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Room-temperature electroluminescence from Ge/Ge 0.92 Sn 0.08 /Ge double heterostructure LED on Si

2014 IPC | IEEE Photonics Conference
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Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

2014 Applied Physics Letters
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Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

2014 Applied Physics Letters
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Investigation of Photoluminescence from Ge1-xSnx: A CMOS-Compatible Material Grown on Si via CVD

2014 CLEO | Conference on Lasers and Electro-Optics
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Photoluminescence from GeSn/Ge heterostructure microdisks with 6% Sn grown on Si via CVD

2014 CLEO | Conference on Lasers and Electro-Optics
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Organic-inorganic hybrid semiconductor Zn Se ( C 2 H 8 N 2 ) 1 ∕ 2 under hydrostatic pressure

2005 Physical Review B
- Amjad Nazzal
- Huaxiang Fu
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Citations (3)