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Tadashi Kai

Toshiba

41

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Spin-RAM for Normally-Off Computer

2011 NVMTS | Non-Volatile Memory Technology Symposium
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High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

2010 Current Applied Physics
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磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード、電子装置、磁気抵抗効果素子の製造方法、及び、磁気ランダムアクセスメモリの製造方法

2009
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Advancements and Future Challenges of Spin Torque Transfer MRAM

2009 The Japan Society of Applied Physics
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Good Scalability of Study of Spin Torque Transfer MRAMs with Perpendicular Magnetization MTJs

2008
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Study of a Spin Torque Transfer MRAM with Perpendicular Magnetization TMR Elements as a High Density Non-volatile Memory

2008
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Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy

2008 Journal of Applied Physics
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Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling

2008 IRPS | International Reliability Physics Symposium
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Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

2008 IEDM | International Electron Devices Meeting
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Reduction of switching current distribution in spin transfer magnetic random access memories

2008 Journal of Applied Physics
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