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S. C. Davies
S. C. Davies
University of Sheffield
Wide-bandgap semiconductor
Photoluminescence
Quantum dot
Physics
Optoelectronics
3
Papers
34
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Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
2010
Applied Physics Letters
S. C. Davies
D. J. Mowbray
F. Ranalli
T. Wang
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Citations (17)
Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
2009
Applied Physics Letters
S. C. Davies
D. J. Mowbray
Q. Wang
F. Ranalli
T. Wang
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Optical and microstructural studies of InGaN/GaN quantum dot ensembles
2009
Applied Physics Letters
S. C. Davies
D. J. Mowbray
F. Ranalli
P. J. Parbrook
Q. Wang
T. Wang
B. S. Yea
B. Sherliker
M. P. Halsall
Reza J. Kashtiban
Ursel Bangert
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Citations (8)
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