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D. Edelstein
D. Edelstein
Samsung
Annealing (metallurgy)
Optoelectronics
Physics
Electronic engineering
Compatibility (mechanics)
2
Papers
12
Citations
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Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
2019
VLSIT | Symposium on VLSI Technology
Takeshi Nogami
H. Huang
H. Shobha
R. Patlolla
J. Kelly
C. Penny
C.-K. Hu
Devika Sil
S. DeVries
J.Y. Lee
S. Nguyen
L. Jiang
J. Demarest
J. Li
G. Lian
M. Ali
P. Bhosale
N. Lanzillo
K. Motoyama
S. Lian
T. Standaert
G. Bonilla
D. Edelstein
B. Haran
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Citations (1)
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
2017
IEDM | International Electron Devices Meeting
Guohan Hu
M. G. Gottwald
Q. He
J. H. Park
Gen P. Lauer
Janusz J. Nowak
S. L. Brown
B. Doris
D. Edelstein
E. R. Evarts
P. Hashemi
B. Khan
Y. H. Kim
C. Kothandaraman
N. Marchack
E. J. OSullivan
M. Reuter
R. P. Robertazzi
J. Z. Sun
T. Suwannasiri
Philip Louis Trouilloud
Y. Zhu
Daniel C. Worledge
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Citations (11)
1