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Gerbe W.G. van Dreumel
Gerbe W.G. van Dreumel
Radboud University Nijmegen
Chemistry
Crystallography
Epitaxy
Nucleation
Sapphire
4
Papers
25
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Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE
2010
Journal of Crystal Growth
T. Bohnen
Hina Ashraf
Gerbe W.G. van Dreumel
Sjoerd Verhagen
Jan L. Weyher
P.R. Hageman
E. Vlieg
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Citations (7)
Growth of scandium aluminum nitride nanowires on scn(111) films on 6h-sic substrates by HVPE
2009
Physica Status Solidi (a)
T. Bohnen
Gerbe W.G. van Dreumel
P.R. Hageman
Rienk E. Algra
Willem J. P. van Enckevort
Elias Vlieg
Marcel A. Verheijen
James H. Edgar
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Citations (5)
On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes
2009
Journal of Crystal Growth
T. Bohnen
Aryan E. F. de Jong
Willem J. P. van Enckevort
Jan L. Weyher
Gerbe W.G. van Dreumel
Hina Ashraf
P.R. Hageman
Elias Vlieg
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Citations (13)
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