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Kin Man Yu

Center for Advanced Materials

17

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239

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Compositions de semi-conducteurs multibande pour dispositifs photovoltaiques

2004
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Substitutionality of Ge atoms in ion implanted AlSb

1995 Applied Physics Letters
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High dose Cl implantation in ZnSe: Impurity incorporation and radiation damage

1994 Journal of Applied Physics
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AMPHOTERIC SUBSTITUTIONALITY AND LATTICE DISTORTION OF GE IN INP

1994 Applied Physics Letters
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Reducing Dislocation Density by Sequential Implantation of Ge and C in Si

1993 MRS Proceedings
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Effects of rapid quenching on the impurity site location in Zn-diffused InP

1993 Journal of Applied Physics
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Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects

1992 Applied Physics Letters
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Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques

1992 Journal of Applied Physics
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An Investigation on the Lattice Site Location of the Excess Arsenic Atoms in GaAs layers Grown by Low Temperature Molecular Beam Epitaxy

1991 MRS Proceedings
- Kin Man Yu
- Z. Liliental-Weber
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Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation‐doped field‐effect transistor structures by secondary‐ion mass spectrometry and ion channeling

1991 Applied Physics Letters
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