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Tiantian Luan

Chinese Academy of Sciences

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Implementation of RTCVD-SiN ₓ Gate Dielectric Into Enhancement-Mode GaN MIS-HEMTs Fabricated on Ultrathin-Barrier AlGaN/GaN-on-Si Platform

2021 IEEE Transactions on Electron Devices
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Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

2021 Applied Physics Letters
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