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Yorick Trouiller

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From 120 to 32 nm CMOS technology: development of OPC and RET to rescue optical lithography

2008 Comptes Rendus Physique
- Yorick Trouiller
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From 120 to 32 nm CMOS technology: development of OPC and RET to rescue optical lithography

2006 Comptes Rendus Physique
- Yorick Trouiller
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Lithographic process optimization using process capability analysis

2003
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Complementary Double Exposure Technique (CODE): a way to print 0.1um gate level using a double exposure binary mask approach

2002
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Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-μm technology

1998
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