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K. Fogel

IBM

14

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165

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Layer transfer of bulk gallium nitride by controlled spalling

2017 Journal of Applied Physics
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Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology

2012 IEDM | International Electron Devices Meeting
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Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)

2008 VLSIT | Symposium on VLSI Technology
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Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology

2008 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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Scalability of Direct Silicon Bonded (DSB) Technology for 32nm Node and Beyond

2007 VLSIT | Symposium on VLSI Technology
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Single Wafer sSOI by SIMOX

2006 SiGeTDM | International SiGe Technology and Device Meeting
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Direct Silicon Bonded (DSB) Substrate Solid Phase Epitaxy (SPE) Integration Scheme Study for High Performance Bulk CMOS

2006 IEDM | International Electron Devices Meeting
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Strain and lattice engineering for Ge FET devices

2006 Materials Science in Semiconductor Processing
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Development of stacking faults in strained silicon layers

2005 SOI | International SOI Conference
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Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation

2004 Applied Physics Letters
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Citations (37)