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J.A. del Alamo

Massachusetts Institute of Technology

178

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A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

2019 IEEE Transactions on Electron Devices
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Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors

2019 Applied Physics Letters
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Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices

2018 Journal of Applied Physics
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A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

2017 IEEE Transactions on Semiconductor Manufacturing
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Quantum-size effects in sub 10-nm fin width InGaAs FinFETs

2015 IEDM | International Electron Devices Meeting
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Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

2015 Journal of Applied Physics
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High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs

2013 The Japan Society of Applied Physics
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InGaAs MOSFETs for CMOS: Recent advances in process technology

2013 IEDM | International Electron Devices Meeting
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Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies

2013 ESSCIRC | European Solid-State Circuits Conference
- J.A. del Alamo
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High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

2013 IEEE Electron Device Letters
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