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Hirotsugu Suzuki

Kanazawa University

5

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Increasing static noise margin of single-bit-line SRAM by lowering bit-line voltage during reading

2011 MWSCAS | International Midwest Symposium on Circuits and Systems
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Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the Distribution

2011 IEEE Transactions on Circuits and Systems Ii-express Briefs
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Accelerated evaluation method for the SRAM cell write margin using word line voltage shift

2011
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