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Eiji Tsukuda

Renesas Electronics

9

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Electron trap level of hydrogen incorporated nitrogen vacancies in silicon nitride

2015 Journal of Applied Physics
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Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs

2007 Technical report of IEICE. VLD
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Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL

2007 IEEE Transactions on Electron Devices
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3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications

1999 IEICE Transactions on Electronics
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