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Jacob Yun
Jacob Yun
composite channel
Materials science
high electron
Optoelectronics
Transistor
2
Papers
7
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Sub-30-nm In₀.8Ga₀.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics
2021
IEEE Transactions on Electron Devices
Hyeon-Bhin Jo
Seung Won Yun
Jun Gyu Kim
Ji Min Baek
Ingeun Lee
Dae-Hyun Kim
Tae-Woo Kim
Sang Kuk Kim
Jacob Yun
Ted Kim
Takuya Tsutsumi
Hiroki Sugiyama
Hideaki Matsuzaki
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Citations (2)
L g = 19 nm In 0.8 Ga 0.2 As composite-channel HEMTs with f T = 738 GHz and f max = 492 GHz
2020
IEDM | International Electron Devices Meeting
Hyeon-Bhin Jo
Seung Won Yun
Jun Gyu Kim
Do-Young Yun
I J Lee
Dae-Hyun Kim
Tae-Woo Kim
Sang Kuk Kim
Jacob Yun
Ted Kim
Takuya Tsutsumi
Hiroki Sugiyama
Hideaki Matsuzaki
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Citations (5)
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