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Shaofei Liu
Shaofei Liu
Peking University
Chemistry
Analytical chemistry
Electronic engineering
Transistor
Threshold voltage
5
Papers
53
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Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process
2018
IEEE Transactions on Electron Devices
Ming Tao
Shaofei Liu
Bing Xie
Cheng P. Wen
Jinyan Wang
Yilong Hao
Wengang Wu
Kai Cheng
Bo Shen
Maojun Wang
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Citations (22)
Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage
2017
IEEE Electron Device Letters
Jingnan Gao
Maojun Wang
Ruiyuan Yin
Shaofei Liu
Cheng P. Wen
Jinyan Wang
Wengang Wu
Yilong Hao
Yufeng Jin
Bo Shen
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Citations (12)
Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 as Passivation and Post Gate-Recess Channel Protection Layers
2017
IEEE Electron Device Letters
Shaofei Liu
Maojun Wang
Ming Tao
Ruiyuan Yin
Jingnan Gao
Haozhe Sun
Wei Lin
Cheng P. Wen
Jinyan Wang
Wengang Wu
Yilong Hao
Zhaofu Zhang
Kevin J. Chen
Bo Shen
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Citations (9)
Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon
2016
IEEE Transactions on Electron Devices
Ming Tao
Maojun Wang
Shaofei Liu
Bing Xie
Min Yu
Cheng P. Wen
Jinyan Wang
Yilong Hao
Wengang Wu
Bo Shen
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Citations (4)
Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique
2016
Applied Physics Express
Fei Sang
Maojun Wang
Ming Tao
Shaofei Liu
Min Yu
Bing Xie
Cheng P. Wen
JingYan Wang
Wengang Wu
Yilong Hao
Bo Shen
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Citations (6)
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