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V. V. Voronenkov

Saint Petersburg State Polytechnic University

8

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146

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Thick GaN Film Stress-induced Self-separation

2019 EIConRus | IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering
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Nature of V-Shaped Defects in GaN

2013 Japanese Journal of Applied Physics
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Two modes of HVPE growth of GaN and related macrodefects

2013 Physica Status Solidi (c)
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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

2012 Semiconductors
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Thick GaN Films Grown on Patterned Sapphire Substrates

2011
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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

2010 Applied Physics Letters
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Mechanism of the GaN LED efficiency falloff with increasing current

2010 Semiconductors
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Citations (16)