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Vicknesh Sahmuganathan
Vicknesh Sahmuganathan
Nanyang Technological University
High-electron-mobility transistor
Transistor
Wide-bandgap semiconductor
Electronic engineering
Atomic layer deposition
5
Papers
212
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Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs
2011
IEEE Transactions on Electron Devices
Zhihong Liu
Geok Ing Ng
S. Arulkumaran
Y. K. T. Maung
K. L. Teo
S. C. Foo
Vicknesh Sahmuganathan
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Citations (8)
Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate
2010
Physica Status Solidi (c)
S. Arulkumaran
Ng Geok Ing
Vicknesh Sahmuganathan
Liu Zhihong
Bryan Maung
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Citations (17)
Improved Linearity for Low-Noise Applications in 0.25- $ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
2010
IEEE Electron Device Letters
Z. Liu
G. I. Ng
S. Arulkumaran
Y. K. T. Maung
K. L. Teo
S. C. Foo
Vicknesh Sahmuganathan
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Citations (43)
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD
2010
IEEE Electron Device Letters
Zhihong Liu
Geok Ing Ng
S. Arulkumaran
Y. K. T. Maung
K. L. Teo
S. C. Foo
Vicknesh Sahmuganathan
Tao Xu
Chee How Lee
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Citations (53)
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator
2009
Applied Physics Letters
Z. Liu
Geok Ing Ng
S. Arulkumaran
Y. K. T. Maung
K. L. Teo
S. C. Foo
Vicknesh Sahmuganathan
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Citations (91)
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