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Tetsuo Kunii

Mitsubishi Electric

7

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63

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60% PAE, 30W X-band and 33% PAE, 100W Ku-band PAs utilizing 0.15 μm GaN HEMT technology

2016 EuMC | European Microwave Conference
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High sensitivity of photoluminescence‐ excitation spectroscopy for probing effects of plasma‐induced surface damages on carrier transport in AlxGa1–xN/GaN heterostructures

2008 Physica Status Solidi (c)
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Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in AlxGa1−xN/GaN heterostructures

2007 Journal of Applied Physics
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High sensitivity of Franz-Keldysh oscillations in photoreflectance spectra for probing morphology in AlxGa 1−xN/GaN heterostructures

2007 European Physical Journal-applied Physics
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A C-band AlGaN/GaN HEMT with Cat-CVD SiN passivation developed for an over 100 W operation

2005 IMS | International Microwave Symposium
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Effect of Bias Condition and Input Harmonic Termination on High Efficiency Inverse Class-F Amplifiers

2001 EuMC | European Microwave Conference
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A 3 W X-Band Power MMIC Amplifier with Buried-Plated-Heat-Sink Transistors

1998 EuMC | European Microwave Conference
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