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M. Fukuda

Fujitsu

3

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7

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A 45nm Low-Cost LSTP CMOS Technology with full NCS/dual-damascene Cu interconnects

2007 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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Suppression of Defect Formation and Their Impact on Short Channel Effects and Drivability of pMOSFET with SiGe Source/Drain

2006 IEDM | International Electron Devices Meeting
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Decaborane ion implantation for sub-40-nm gate-length PMOSFETs to enable formation of steep ultra-shallow junction and small threshold voltage fluctuation

2005 IWJT | International Workshop on Junction Technology
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