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Takashi Aratani
Takashi Aratani
Tohoku University
Analytical chemistry
Silicon nitride
Plasma
Nuclear magnetic resonance
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9
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24
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Quantitative Analysis of the Strain Field beneath the Si3N4/Si(001) Interface Formed by the Xe/NH3 Plasma Nitridation using a Multiple-Wave X-ray Diffraction Phenomenon
2009
Transactions-Materials Research Society of Japan
Wataru Yashiro
Yoshitaka Yoda
Takashi Aratani
Akinobu Teramoto
Takeo Hattori
Kazushi Miki
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Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
2009
SDM | SIAM International Conference on Data Mining
Tomoyuki Suwa
Takashi Aratani
Masaaki Higuchi
S. Sugawa
Eiji Ikenaga
Jiro Ushio
Hiroshi Nohira
Akinobu Teramoto
Tadahiro Ohmi
Takeo Hattori
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Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
2007
Japanese Journal of Applied Physics
Masaaki Higuchi
Takashi Aratani
Tatsufumi Hamada
S. Shinagawa
Hiroshi Nohira
Eiji Ikenaga
Akinobu Teramoto
Takeo Hattori
Shigetoshi Sugawa
Tadahiro Ohmi
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Citations (7)
Electric characteristics of Si3N4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces.
2006
The Japan Society of Applied Physics
Masaaki Higuchi
Takashi Aratani
Tatsufumi Hamada
Akinobu Teramoto
Takeo Hattori
Shigetoshi Sugawa
Tadahiro Ohmi
S. Shinagawa
Hiroshi Nohira
Eiji Ikenaga
Keisuke Kobayashi
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