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Wahid Khalfaoui
Wahid Khalfaoui
François Rabelais University
Analytical chemistry
Annealing (metallurgy)
Optoelectronics
Gallium nitride
Surface finish
4
Papers
19
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A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy
2017
Materials Science in Semiconductor Processing
Georgio El-zammar
Arnaud Yvon
Wahid Khalfaoui
Maher Nafouti
F. Cayrel
Emmanuel Collard
Daniel Alquier
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Citations (12)
Impact of rapid thermal annealing on Mg‐implanted GaN with a SiOx/AlN cap‐layer
2017
Physica Status Solidi (a)
Wahid Khalfaoui
Thomas Oheix
Georgio El-zammar
Roland Benoit
F. Cayrel
E. Faulques
Florian Massuyeau
Arnaud Yvon
Emmanuel Collard
Daniel Alquier
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Citations (3)
Gallium nitride surface protection during RTA annealing with a GaOxNy cap-layer
2016
Semiconductor Science and Technology
Wahid Khalfaoui
T. Oheix
F. Cayrel
Roland Benoit
Arnaud Yvon
Emmanuel Collard
Daniel Alquier
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Citations (1)
Surface state of GaN after rapid-thermal-annealing using AlN cap-layer
2015
Applied Surface Science
Georgio El-zammar
Wahid Khalfaoui
T. Oheix
Arnaud Yvon
Emmanuel Collard
F. Cayrel
Daniel Alquier
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Citations (3)
1