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Balint Podor
Balint Podor
Óbuda University
Electronic engineering
Engineering
Gallium arsenide
Optoelectronics
Band gap
6
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1
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0
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Defect thermal ionization energies in Cu-III-VI 2 compound semiconductors
2009
ISSE | International Spring Seminar on Electronics Technology
Balint Podor
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Electrical and optical properties of InGaAsSb/GaSb
2009
ISSE | International Spring Seminar on Electronics Technology
Balint Podor
Zsolt József Horváth
V. Rakovics
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Makyoh topography: a simple and powerful method for the flatness characterisation of semiconductor wafers
2008
Ferenc Riesz
István Endre Lukács
Janos Szabo
János P. M Akai
István Réti
Béla Szentpáli
Imre Eördögh
Balint Podor
Zsolt John Laczik
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Electrical and photoelectrical behavior of Au/n-CdTe junctions
2001
Zsolt József Horváth
V. P. Makhniy
Istvan Reti
M. V. Demych
Vo Van Tuyen
Peter M. Gorley
Janos Balazs
Kostyantyn S. Ulyanitsky
L. Dózsa
P.P. Horley
Balint Podor
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