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F. Jahnel

Ludwig Maximilian University of Munich

3

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Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

1981 Nuclear Instruments and Methods
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The application of the (n, α) method for boron depth profiling and channeling-blocking measurements in semiconductor materials

1980 Nuclear Instruments and Methods
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High concentration effects of ion implanted boron in silicon

1980 Applied physics
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