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Su Hongyuan
Su Hongyuan
Beijing University of Technology
Ion beam
Biasing
Breakdown voltage
Doping
Electric field
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Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET
2016
Journal of Semiconductors
Jia Yunpeng
Su Hongyuan
Jin Rui
Hu Dongqing
Wu Yu
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