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Escoffier Rene
Escoffier Rene
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Very low parasitic inductance double side cooling power modules based on ceramic substrates and GaN devices
2020
Laurant Christine
Delaine Johan
Perichon Pierre
Thollin Benoit
Lanneluc Charley
Izoulet Antoine
Porlan Manon
Escoffier Rene
Brun (Jean)
Favre Jacques
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MOS-like approach for compact modeling of High-Electron-Mobility Transistor
2020
Vaysset Adrien
Martinie Sébastien
Triozon Francois
Rozeau Olivier
Jaud Marie-Anne
Escoffier Rene
Thierry Poiroux
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MOCVDとその効果欠陥によるシリコン上のAlNの理解核形成の開発【Powered by NICT】
2017
Physica Status Solidi A-applications and Materials Science
Charles Matthew
Bavard Alexis
Bouis Renan
Baines Yannick
Escoffier Rene
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