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Ravi Sandhu
Ravi Sandhu
Grumman Aircraft Corporation
Heterojunction bipolar transistor
Materials science
Electronic engineering
Heterojunction
Bipolar junction transistor
3
Papers
10
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172 GHz divide-by-two circuit using a 0.25-µm InP HBT technology
2009
IPRM | International Conference on Indium Phosphide and Related Materials
Cedric Monier
M. D'Amore
D. Scott
A. Cavus
E. Kaneshiro
S. Lin
P.C. Chang
L. Dang
K. Sato
V. Radisic
M. Truong
P. Nam
D. Pascua
D. Li
B. Chan
Ravi Sandhu
J. Wang
B. Oyama
Augusto Gutierrez
A. Oki
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Citations (7)
Metamorphic 6.0 In0.86Al0.14As/In0.86Ga0.14As double heterojunction bipolar transistors
2003
Cedric Monier
A. Cavus
Ravi Sandhu
Donald Sawdai
Michael D. Lange
Vincent Gambin
Thomas R. Block
Augusto Gutierrez-Aitken
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1