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R. Schewski

Institut für Kristallzüchtung

23

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1456

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β-Ga2O3:Ce as a fast scintillator: An unclear role of cerium

2019 Radiation Measurements
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Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

2019 ECS Journal of Solid State Science and Technology
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Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy

2019 APL Materials
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Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

2019 APL Materials
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Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

2018 Journal of Crystal Growth
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Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates

2017 ECS Journal of Solid State Science and Technology
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Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

2016 Journal of Applied Physics
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Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)

2015 Applied Physics Express
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MgGa2O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals

2015 Physica Status Solidi (a)
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Electrical compensation by Ga vacancies in Ga2O3

2015 Applied Physics Letters
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Citations (13)