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I Abdelrehim

4

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Ultra shallow junctions with high dopant activation and GeO 2 interfacial layer for gate dielectric in germanium MOSFETs

2010 DRC | Device Research Conference
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SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy

2007 Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
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SIMS Analyses Of Ultra‐Low Energy B Ion Implants In Si: Evaluation Of Profile Shape And Dose Accuracy

2007
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Powdered obsidian for determining hydration rates and site thermometry

2004 Mediterranean Archaeology & Archaeometry
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