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Kim Kyung Wan
Kim Kyung Wan
Coulomb blockade
Doping
Quantum dot
Physics
Communication channel
3
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4
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0
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Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
2010
Japanese Journal of Applied Physics
Joung-Eob Lee
Garam Kim
Kim Kyung Wan
Won Bo Shim
Jung-Han Lee
Kwon-Chil Kang
Jang-Gn Yun
Jong-Ho Lee
Hyungcheol Shin
Byung-Gook Park
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Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current
2010
Lee Joung-eob
Kang Kwon-Chil
Jung-Han Lee
Kim Kyung Wan
Park Byung-Gook
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Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current(Session 9B : Nano-Scale devices and Physics)
2010
SDM | SIAM International Conference on Data Mining
Joung-Eob Lee
Kwon-Chil Kang
Jung-Han Lee
Kim Kyung Wan
Byung-Gook Park
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