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Hideaki Fujiwara

Nanotechnology
Nanometre
Electronic engineering
Voltage
Materials science

3

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16

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Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

2005 Journal of Vacuum Science & Technology B
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Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface

2004 The Japan Society of Applied Physics
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