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Dong Zhihua
Dong Zhihua
Chinese Academy of Sciences
Electronic engineering
High-electron-mobility transistor
Leakage (electronics)
Transconductance
Chemistry
3
Papers
8
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その場蒸着前プラズマ窒化とLPCVD‐Si3N4ゲート絶縁体を有する超低V_thヒステリシスと電流コラプスのAlGaN/GaN MIS‐HEMT【Powered by NICT】
2017
IEEE Electron Device Letters
Zhang Zhili
Li Weiyi
Fu Kai
Yu Guohao
Zhang Xiaodong
Zhao Yanfei
Sun Shichuang
Song Liang
Deng Xuguang
Xing Zheng
Yang Lei
Ji Rongkun
Zeng Chunhong
Fan Yaming
Dong Zhihua
Cai Yong
Zhang Bao-shun
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Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current
2012
Journal of Semiconductors
Gu Guodong
Cai Yong
Feng Zhi-hong
Liu Bo
Zeng Chunhong
Yu Guohao
Dong Zhihua
Zhang Baoshun
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A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator
2011
Chinese Physics Letters
Zhou Bin
Wang Jinyan
Meng Di
Lin Shuxun
Fang Min
Dong Zhihua
Yu Min
Hao Yilong
Cheng P. Wen
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Citations (3)
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