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Joseph Seiler
Joseph Seiler
Rensselaer Polytechnic Institute
Composite material
Materials science
Epitaxy
Optoelectronics
Current density
7
Papers
104
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Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask
2005
Journal of Electronic Materials
Canhua Li
P. Losee
Joseph Seiler
Ishwara B. Bhat
T.P. Chow
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Citations (12)
Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films
2005
Materials Science Forum
Peter Almern Losee
Can Hua Li
Joseph Seiler
Robert E. Stahlbush
T. Paul Chow
Ishwara B. Bhat
Ronald J. Gutmann
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Citations (1)
Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
2005
Materials Science Forum
Can Hua Li
Peter Almern Losee
Joseph Seiler
T. Paul Chow
Ishwara B. Bhat
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Citations (2)
Electro-chemical mechanical polishing of silicon carbide
2004
Journal of Electronic Materials
Canhua Li
Ishwara B. Bhat
Rongjun Wang
Joseph Seiler
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Citations (72)
Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
2004
Materials Science Forum
Can Hua Li
Joseph Seiler
Ishwara B. Bhat
T. Paul Chow
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Citations (9)
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