Old Web
English
Sign In
Acemap
>
authorDetail
>
L. Persichetti
L. Persichetti
Instituto Politécnico Nacional
Annealing (metallurgy)
Materials science
Dissolution
Melting point
Inorganic chemistry
3
Papers
5
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration
2020
L. Persichetti
Chiara Ciano
Michele Montanari
L. Baldassarre
Luciana Di Gaspare
Alexej Pashkin
Manfred Helm
Oliver Skibitzki
Marvin Zöllner
G. Capellini
Michele Ortolani
Michele Virgilio
Monica De Seta
Show All
Source
Cite
Save
Citations (0)
Fabrication of SiGe rings and holes on Si(0 0 1) by flash annealing
2013
Applied Surface Science
L. Persichetti
Andrea Capasso
A. Sgarlata
A. Quatela
S. Kaciulis
A. Mezzi
Marco Notarianni
Nunzio Motta
M. Fanfoni
A. Balzarotti
Show All
Source
Cite
Save
Citations (2)
The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy
2013
Journal of Physics: Condensed Matter
L. Persichetti
A. Sgarlata
M. Fanfoni
A. Balzarotti
Show All
Source
Cite
Save
Citations (3)
1