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E. Napolitani

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Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium.

2018 arXiv: Instrumentation and Detectors
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EFFECTOFHeINDUCEDNANOVOID ON BIMPLANTED INSi: THE MICROSCOPICMECHANISM

2007 International Conference on Advanced Thermal Processing of Semiconductors
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Novel aspects of the atomic transport of B implanted in silicon at energies below 1 keV

2000
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The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si

1998
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A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching

1998
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