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R.N. Jacobs
R.N. Jacobs
Analytical chemistry
Etch pit density
Epitaxy
Molecular beam epitaxy
Chemistry
6
Papers
14
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The Use of Confocal Photoluminescence Microscopy for Determination of Defect Densities in Various 2-6 Semiconductors
2014
O. C. Noriega
A. Savage
T. H. Myers
P J Smith
R.N. Jacobs
C. M. Lennon
P. S. Wijewarnasuriya
Y. Chen
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High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy
2011
Journal of Electronic Materials
Sunil Rao
Shashidhar Shintri
J. K. Markunas
R.N. Jacobs
Ishwara B. Bhat
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Citations (3)
Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates
2010
Journal of Electronic Materials
Sunil Rao
Shashidhar Shintri
J. K. Markunas
R.N. Jacobs
Ishwara B. Bhat
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Citations (6)
MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates
2010
Journal of Electronic Materials
T. J. de Lyon
Rajesh D. Rajavel
Brett Z. Nosho
Sevag Terterian
M. L. Beliciu
Pamela R. Patterson
David T. Chang
M.F. Boag-O'Brien
B. T. Holden
R.N. Jacobs
J. D. Benson
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Citations (5)
Analysis of defects in HgCdTe and CdTe epilayers on Si by dual-beam FIB
2006
Microscopy and Microanalysis
Taehun Lee
J. Huang
Dongkyu Cha
R.N. Jacobs
J. H. Dinan
Moon J. Kim
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