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Rahil Izzati Mohd Asri
Rahil Izzati Mohd Asri
Materials science
Doping
Indium gallium nitride
Light-emitting diode
Annealing (metallurgy)
3
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Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode
2021
Microelectronics International
Nur Atiqah Hamzah
Mohd Anas Ahmad
Rahil Izzati Mohd Asri
Ezzah Azimah Alias
Mohd Ann Amirul Zulffiqal Md Sahar
Ng Sha Shiong
Zainuriah Hassan
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Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes
2021
Microelectronics International
Mohd Ann Amirul Zulffiqal Md Sahar
Zainuriah Hassan
Sha Shiong Ng
Way Foong Lim
Khai Shenn Lau
Ezzah Azimah Alias
Mohd Anas Ahmad
Nur Atiqah Hamzah
Rahil Izzati Mohd Asri
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Effect of varying thermal annealing temperatures on the surface and electrical properties of Mg-doped GaN
2020
Noor Afifa Mohd Hanafiah
Zainuriah Hassan
Way Foong Lim
Norasmida Ibrahim
Ezzah Azimah Alias
M. A. Ahmad
Nur Atiqah Hamzah
Rahil Izzati Mohd Asri
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