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Koji Iizuka
Koji Iizuka
Renesas Electronics
Silicon
Materials science
Engineering
Electrical engineering
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A Study of On-state Breakdown Decreasing of nLDMOSFETs by Hole Current Increase Depending on Drain Pulse Rise Time
2020
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Takahiro Mori
Tomonari Yamaguchi
Takeshi Kamino
Junji Tsuruta
Mototsugu Okushima
Hirokazu Sayama
Koji Iizuka
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Experimental Study on the Effect of Recessed Gates in Drain STI Regions of nLDMOSFETs
2019
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Takahiro Mori
Hirokazu Sayama
Takashi Ipposhi
Koji Iizuka
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