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I. N. Tsyplenkov
I. N. Tsyplenkov
Epitaxy
Materials science
Chemistry
Optoelectronics
Electron
9
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Study of fractal features morphology of surface HEMT GAN heterostructures on foreign substrates
2011
CriMiCo | International Crimean Conference Microwave and Telecommunication Technology
N. A. Torkhov
V. G. Bozhkov
V. A. Novikov
I. V. Ivonin
Yu. N. Sveshnikov
I. N. Tsyplenkov
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Photosensitivity of the epitaxial structure p-GaAs/n-GaAs/p-Si
1995
Semiconductors
L. A. Ivanyutin
F. M. Katsapov
S. Yu. Rakhlei
I. N. Tsyplenkov
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Photoluminescence and capacitance-spectroscopy diagnostics of epitaxial GaAs films grown on silicon substrates
1991
Soviet physics. Semiconductors
T. I. KolChenko
V. M. Lomako
S. E. Moroz
O. A. Ponomareva
V. V. Sergeeva
I. N. Tsyplenkov
A. Tybulewicz
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Influence of fast-electron irradiation on the edge photoluminescence of epitaxial n-type InP films
1990
Soviet physics. Semiconductors
F.P. Korshunov
S.I. Radautsan
N. A. Sobolev
I. M. Tiginyanu
E. A. Kudryavtseva
V. A. Ursu
I. N. Tsyplenkov
V. N. Lamm
V. A. Sheraukhov
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Electrons mobility in the InP
1988
L. A. Ivanyutin
K. S. Kibitskas
L. V. Kregzhdene
A. Yu. Matulenis
I. V. Parshyalyunas
I. N. Tsyplenkov
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