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Shaw-Hung Ku

6

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15

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Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory

2018 IRPS | International Reliability Physics Symposium
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A new methodology for assessment of the susceptibility to data retention in floating gate non-volatile memories

2017 IRPS | International Reliability Physics Symposium
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Characterization of junction dosage effect on NAND arrays with charge pumping method

2011 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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Junction optimization for Reliability issues in floating gate NAND flash cells

2011 IRPS | International Reliability Physics Symposium
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Source/Drain dopant concentration induced reliability issues in charge trapping NAND flash cells

2010 IRPS | International Reliability Physics Symposium
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Citations (6)