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Bhagawan Sahu

University of Texas at Austin

72

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2080

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First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance

2017 IEEE Transactions on Electron Devices
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Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization

2017 Journal of Chemical Physics
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Chemically selective formation of Si–O–Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)

2016 Surface Science
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Nitride passivation of the interface between high-k dielectrics and SiGe

2016 Applied Physics Letters
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Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces

2016 Applied Surface Science
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Impact of gate oxide complex band structure on n-channel III–V FinFETs

2015 SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
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Investigation of performance limiting factors of sub-10nm III-V FinFETs

2015 EUROSOI-ULIS | Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
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Combined wet and dry cleaning of SiGe(001)

2015 Journal of Vacuum Science and Technology
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The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

2015 Journal of Chemical Physics
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Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

2014 Surface Science
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Citations (13)