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K. Garello
K. Garello
Katholieke Universiteit Leuven
Optoelectronics
Physics
Tunnel magnetoresistance
Stack (abstract data type)
Magnetoresistive random-access memory
4
Papers
82
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Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling
2018
IEDM | International Electron Devices Meeting
Kiroubanand Sankaran
J. Swerts
R. Carpenter
Sebastien Couet
K. Garello
R. F. L. Evans
S. Rao
W. Kim
Shreya Kundu
Davide Crotti
Gouri Sankar Kar
Geoffrey Pourtois
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Citations (3)
SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories
2018
VLSIC | Symposium on VLSI Circuits
K. Garello
F. Yasin
Sebastien Couet
Laurent Souriau
J. Swerts
S. Rao
S. Van Beek
W. Kim
E. Liu
Shreya Kundu
Diana Tsvetanova
Kristof Croes
Nico Jossart
E. Grimaldi
Manuel Baumgartner
Davide Crotti
A. Fumemont
Pietro Gambardella
Gouri Sankar Kar
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Citations (55)
Synthetic-Ferromagnet Pinning Layers Enabling Top-Pinned Magnetic Tunnel Junctions for High-Density Embedded Magnetic Random-Access Memory
2018
Physical review applied
E. Liu
Y.-C. Wu
Sebastien Couet
S. Mertens
S. Rao
W. Kim
K. Garello
Davide Crotti
S. Van Elshocht
J. De Boeck
Gouri Sankar Kar
J. Swerts
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Citations (9)
Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks
2017
IEDM | International Electron Devices Meeting
J. Swerts
E. Liu
Sebastien Couet
S. Mertens
S. Rao
W. Kim
K. Garello
Laurent Souriau
Shreya Kundu
Davide Crotti
F. Yasin
Nico Jossart
Sushil Sakhare
T. Devolder
S. Van Beek
B.J. O'Sullivan
S. Van Elshocht
A. Furnemont
Gouri Sankar Kar
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Citations (15)
1