author-photo

R Murray

University of Reading

15

Papers

428

Citations

Citation Trend

Filter By

Papers (13) Sort By

Journal Conference Others

The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers

1993 Materials Science Forum
Show All
- Source
- Cite
- Save
Citations (9)
The Selective Trapping of Arsenic Interstitial Atoms by Impurities in Gallium Arsenide

1989 Physica Status Solidi B-basic Solid State Physics
Show All
- Source
- Cite
- Save
Citations (11)
Post-growth diffusion of Si in delta -doped GaAs grown by MBE

1989 Semiconductor Science and Technology
Show All
- Source
- Cite
- Save
Citations (41)
Fano profiles of absorption lines from the localised vibrational modes of Be acceptors in GaAs and B acceptors in silicon

1989 Semiconductor Science and Technology
Show All
- Source
- Cite
- Save
Citations (15)
Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs

1989 Materials Science Forum
Show All
- Source
- Cite
- Save
Citations (6)
The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

1989 Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (134)
High-resolution infrared study of the neutralization of silicon donors in gallium arsenide

1988 Physical Review B
Show All
- Source
- Cite
- Save
Citations (69)
The passivation of Be acceptors in GaAs by exposure to a hydrogen plasma

1988 Semiconductor Science and Technology
Show All
- Source
- Cite
- Save
Citations (50)
Enhanced thermal donor formation in silicon exposed to a hydrogen plasma

1988 Semiconductor Science and Technology
Show All
- Source
- Cite
- Save
Citations (45)
The stability of Frenkel pairs and group V interstitials in electron-irradiated GaAs and GaP

1987 Semiconductor Science and Technology
Show All
- Source
- Cite
- Save
Citations (10)