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V. Notot

Université Paris-Saclay

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Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on p-type doped InP(001)

2019 Physical Review Materials
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Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar

2017 Journal of Applied Physics
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Luminescence imaging of photoelectron spin precession during drift in p-type GaAs

2016 arXiv: Mesoscale and Nanoscale Physics
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