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Ben L.-H. Tan
Ben L.-H. Tan
Electronic engineering
Nanowire
Transistor
Germanium
Field-effect transistor
2
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24
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5 nm gate length Nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
2008
VLSIT | Symposium on VLSI Technology
Tsung-Yang Liow
Kian-Ming Tan
Rinus T. P. Lee
Ming Zhu
Ben L.-H. Tan
Ganesh S. Samudra
N. Balasubramanian
Yee Chia Yeo
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Citations (14)
Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors
2008
IEEE Electron Device Letters
Tsung-Yang Liow
Kian-Ming Tan
Rinus T. P. Lee
Ming Zhu
Ben L.-H. Tan
N. Balasubramanian
Yee Chia Yeo
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Citations (10)
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