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F. Duteil

Linköping University

11

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57

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Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes

2001 Applied Physics Letters
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1.54 μm Light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy

2001 Optical Materials
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Efficient 1.54 μm light emission from Si/SiGe/Si:Er:O transistors prepared by differential MBE

2001 Materials Science and Engineering B-advanced Functional Solid-state Materials
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LASERS, OPTICS, AND OPTOELECTRONICS 2095 Temperature profile of GaInAs'AlInAs'InP quantum cascade-laser facets measured by microprobe photoluminescence

2001
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Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy

2000 Optical Materials
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Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by molecular beam epitaxy

2000 Thin Solid Films
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Device aspects of Er-doped Si structures for optoelectric interconnect applications

1999 Physica Scripta
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Er-doped edge emitting devices with a SiGe waveguide

1998 Journal of Luminescence
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