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Asanuma Shutaro
Asanuma Shutaro
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Ir/Ti/Ta/HfO 2 /TiN/Ti/SiO 2 /Si 抵抗スイッチング・デバイスの形成電圧に対する挿入Ta極薄層とポスト堆積アニールの影響
2015
Japanese Journal of Applied Physics
Asanuma Shutaro
Shima Hisashi
Yamazaki Masashi
Hayama Kazumi
Hata Nobuhiro
Akinaga Hiroyuki
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